v rrm = 400 v - 600 v i f(av) = 100 a features ? high surge capability three tower package ? types from 400 v to 600 v v rrm ? isolation type package ? electrically isolated base plate ? not esd sensitive parameter symbol MURT10040(r) unit repetitive peak reverse voltage v rrm 400 v rms reverse voltage v rms 283 v dc blocking voltage v 400 v 600 424 600 MURT10040 thru murt10060r silicon super fast recover y diode maximum ratings, at t j = 25 c, unless otherwise specified ("r" devices have leads reversed) conditions murt10060(r) dc blocking voltage v dc 400 v operating temperature t j -55 to 150 c storage temperature t stg -55 to 150 c parameter symbol MURT10040(r) unit a verage forward current (per pkg) i f(av) 100 a peak forward surge current (per leg) i fsm 1500 a maximum instantaneous forward voltage (per leg) 1.3 25 a 1ma maximum reverse recovery time (per leg) t rr 90 ns thermal characteristics maximum thermal resistance, junction - case (per leg) r jc 1.0 c/w 600 -55 to 150 -55 to 150 25 1 110 1.0 t j = 25 c t j = 125 c i f =0.5 a, i r =1.0 a, i rr = 0.25 a murt10060(r) 100 electrical characteristics, at tj = 25 c, unless otherwise specified conditions t c = 140 c t p = 8.3 ms, half sine 1500 v f i fm = 50 a, t j = 25 c 1.7 v maximum instantaneous reverse current at rated dc blocking voltage (per leg) i r www.genesicsemi.com/s ilicon-products/super-fast-recovery-rectifiers/ 1
MURT10040 thru murt10060r www.genesicsemi.com/s ilicon-products/super-fast-recovery-rectifiers/ 2
package dimensions and terminal configuration product is marked with part number and terminal configuration. MURT10040 thru murt10060r www.genesicsemi.com/s ilicon-products/super-fast-recovery-rectifiers/ 3
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